High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• Ryo Izumi Masato Miyazaki Yan Jun Li Yasuhiro Sugawara Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan 10.3762/bjnano.14.18 Abstract The recently proposed high–low Kelvin probe force microscopy (KPFM) enables evaluation

• surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density. Keywords: high–low Kelvin probe force microscopy; high–low Kelvin probe force spectroscopy; interface state density; Kelvin probe force microscopy; Kelvin probe

• –low Kelvin probe force microscopy (high–low KPFM) as a technique to solve the above problem [20][21]. High–low KPFM is a method for measuring the magnitude and direction of band bending due to interface states by applying low-frequency and high-frequency AC bias voltages between the tip and the sample